科创中国

Further development of the photovoltaic industry is restricted by the productivity of mono-crystalline silicon technology due to its requirements of low cost and high efficient photocells.The heat shield is not only the important part of the thermal field in Czochralski(Cz)mono-crystalline silicon furnace,but also one of the most important factors influencing the silicon crystal growth.Large-diameter Cz-Si crystal growth process is taken as the study object.Based on FEM numerical simulation,different heat shield structures are analyzed to investigate the heater power,the melt-crystal interface shape,the argon flow field,and the oxygen concentration at the melt-crystal interface in the process of large Cz-Si crystal growth.The impact of these factors on the growth efficiency and crystal quality are analyzed.The results show that the oxygen concentration on the melt-crystal interface and the power consumption of the heater stay high due to the lack of a heat shield in the crystal growth system.Argon circumfluence is generated on the external side of the right angle heat shield.By the right-angle heat shield,the speed of gas flow is lowered on the melt free surface,and the temperature gradient of the free surface is increased around the melt-crystal interface.It is not conducive for the stable growth of crystal.The shape of the melt-crystal interface and the argon circulation above the melt free surface are improved by the inclined heat shield.Compared with the others,the system pulling rate is increased and the lowest oxygen concentration is achieved at the melt-crystal interface with the composite heat shield.By the adoption of the optimized composite heat shield in experiment,the real melt-crystal interface shapes and its deformation laws obtained by Quick Pull Separation Method at different pulling rates agree with the simulation results.The results show that the method of simulation is feasible.The proposed research provides the theoretical foundation for the thermal field design of the large diameter Cz-Si monocrystalline growth.

Silicon Laboratories发布Precision32单片机系列产品,基于ARMCortex-M3处理器.产品型号为32位SiM3U1xx和SiM3ClxxMCU,具有引脚兼容的集成USB和非集成USB功能选项.

The accurate measurement on the compressibility and thermal expansion coefficients of density standard liquid at 2329kg/m3(DSL-2329) plays an important role in the quality control for silicon single crystal manufacturing. A new method is developed based on hydrostatic suspension principle in order to determine the two coefficients with high measurement accuracy. Two silicon single crystal samples with known density are immersed into a sealed vessel full of DSL-2329. The density of liquid is adjusted with varying liquid temperature and static pressure, so that the hydrostatic suspension of two silicon single crystal samples is achieved. The compression and thermal expansion coefficients are then calculated by using the data of temperature and static pressure at the suspension state. One silicon single crystal sample can be suspended at different state, as long as the liquid temperature and static pressure function linearly according to a certain mathematical relationship. A hydrostatic suspension experimental system is devised with the maximal temperature control error ±50 μK; Silicon single crystal samples can be suspended by adapting the pressure following the PID method. By using the method based on hydrostatic suspension principle, the two key coefficients can be measured at the same time, and measurement precision can be improved due to avoiding the influence of liquid surface tension. This method was further validated experimentally, where the mixture of 1, 2, 3-tribromopropane and 1,2-dibromoethane is used as DSL-2329. The compressibility and thermal expansion coefficients were measured, as 8.5′10–4 K–1 and 5.4′10–10 Pa–1, respectively.

采用不同偶联剂对纳米碳化硅进行表面处理后,制备了聚四氟乙烯/纳米碳化硅复合材料,考察了偶联剂种类和含量随载荷变化对复合材料摩擦磨损性能的影响,并利用扫描电子显微镜观察和分析了复合材料磨损表面形貌及其磨损机理.结果表明,经表面处理的纳米碳化硅填充后的复合材料硬度和摩擦磨损性能均有提高,以钛酸酯偶联剂(NDZ101)处理效果最好;随着偶联剂含量的增大,钛酸酯偶联剂(NDZ101)处理的复合材料的磨损量和摩擦因数均增大,偶联剂最佳含量为填料质量的1%;偶联剂处理后的纳米碳化硅与基体之间形成了良好的界面,复合材料的磨损以黏着磨损和磨粒磨损为主.